IPN95R3K7P7ATMA1

MOSFET N-CH 950V 2A SOT223 | Infineon Technologies

MOSFET N-CH 950V 2A SOT223

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Ürün Açıklaması

N-Channel 950 V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223

Özellikler

Grade: -
FET Type: N-Channel
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Surface Mount
Qualification: -
Package / Case: TO-261-4, TO-261AA
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Supplier Device Package: PG-SOT223
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)

https://www.infineon.com/dgdl/Infineon-IPN95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643b2dacda55d7