CAB425M12XM3

Ürün Açıklaması

Mosfet Array 1200V (1.2kV) 450A Chassis Mount

Özellikler

• Technology: Silicon Carbide (SiC)
• FET Feature: -
• Power - Max: -
• Configuration: 2 N-Channel (Half Bridge)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Vgs(th) (Max) @ Id: 3.6V @ 115mA
• Operating Temperature: -40°C ~ 175°C (TJ)
• Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
• Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
• Current - Continuous Drain (Id) @ 25°C: 450A