NXH003P120M3F2PTHG

Ürün Açıklaması

Mosfet Array 1200V (1.2kV) 350A (Tc) 979W (Tc) Chassis Mount 36-PIM (56.7x62.8)

Özellikler

• Technology: Silicon Carbide (SiC)
• FET Feature: -
• Power - Max: 979W (Tc)
• Configuration: 2 N-Channel (Half Bridge)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Vgs(th) (Max) @ Id: 4.4V @ 160mA
• Operating Temperature: -40°C ~ 175°C (TJ)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
• Supplier Device Package: 36-PIM (56.7x62.8)
• Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
• Current - Continuous Drain (Id) @ 25°C: 350A (Tc)