FF4MR12W2M1HB70BPSA1

LOW POWER EASY | Infineon Technologies

LOW POWER EASY

Fiyat Aralığı

Fiyatlar 0 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

Collecting offers...

Tedarikçi	Stok	Min	Fiyat	Teslimat	Güncellendi	Adet	İşlem
Future Electronics	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Arrow	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Mouser	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
TME	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Farnell	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Digi-Key	0	0		20 Hafta	Pending refresh		Stokta Yok

Genel Bakış

Dokümanlar

Ürün Açıklaması

Mosfet Array 1200V (1.2kV) 200A Chassis Mount

Özellikler

Grade: -
Technology: Silicon Carbide (SiC)
FET Feature: -
Power - Max: -
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Qualification: -
Package / Case: Module
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Supplier Device Package: -
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A

https://www.infineon.com/dgdl/Infineon-FF4MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018b728b82ad7c86