SI2387DS-T1-GE3

Ürün Açıklaması

P-Channel 80 V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Özellikler

• Grade: -
• FET Type: P-Channel
• Vgs (Max): ±20V
• Technology: MOSFET (Metal Oxide)
• FET Feature: -
• Mounting Type: Surface Mount
• Qualification: -
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
• Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
• Supplier Device Package: SOT-23-3 (TO-236)
• Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
• Drain to Source Voltage (Vdss): 80 V
• Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)