SI2333DDS-T1-GE3

Ürün Açıklaması

P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Özellikler

• Grade: -
• FET Type: P-Channel
• Vgs (Max): ±8V
• Technology: MOSFET (Metal Oxide)
• FET Feature: -
• Mounting Type: Surface Mount
• Qualification: -
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
• Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
• Supplier Device Package: SOT-23-3 (TO-236)
• Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
• Drain to Source Voltage (Vdss): 12 V
• Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)