MMUN2134LT1G

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

Özellikler

• Grade: -
• Power - Max: 246 mW
• Mounting Type: Surface Mount
• Qualification: -
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Resistors Included: R1 and R2
• Resistor - Base (R1): 22 kOhms
• Supplier Device Package: SOT-23-3 (TO-236)
• Resistor - Emitter Base (R2): 47 kOhms
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector (Ic) (Max): 100 mA
• Current - Collector Cutoff (Max): 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Voltage - Collector Emitter Breakdown (Max): 50 V