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Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
TRANS PREBIAS NPN 50V TO236AB

PDTC123JT,235

TRANS PREBIAS NPN 50V TO236AB | Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount TO-236AB

Özellikler

  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Transistor Type: NPN - Pre-Biased
  • Resistors Included: R1 and R2
  • Resistor - Base (R1): 2.2 kOhms
  • Supplier Device Package: TO-236AB
  • Resistor - Emitter Base (R2): 47 kOhms
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max): 100 mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50 V
https://assets.nexperia.com/documents/data-sheet/PDTC123JT.pdf