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EMD22T2R

TRANS PREBIAS 1NPN 1PNP 50V EMT6 | Rohm Semiconductor
Fiyat Aralığı
$0.097 - $0.558
Fiyatlar 3 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4 HaftaPending refreshStokta Yok
Arrow
1879511
$0.1481 (Min: 511)
$0.1432 (Min: 1000)
3 - 4 Hafta18 Kasım 2025 00:42Ekle
Mouser
67951
$0.53 (Min: 1)
$0.294 (Min: 10)
$0.206 (Min: 100)
$0.165 (Min: 500)
$0.138 (Min: 1000)
$0.133 (Min: 2500)
$0.11 (Min: 5000)
$0.105 (Min: 8000)
$0.097 (Min: 24000)
Daha fazla göster
3 - 4 Hafta18 Kasım 2025 00:42Ekle
TME
01
$0.558 (Min: 1)
$0.364 (Min: 10)
$0.208 (Min: 100)
$0.153 (Min: 500)
$0.138 (Min: 1000)
$0.127 (Min: 2000)
$0.116 (Min: 5000)
$0.113 (Min: 8000)
$0.108 (Min: 16000)
$0.103 (Min: 40000)
Daha fazla göster
3 - 4 Hafta18 Kasım 2025 00:42Stokta Yok
Farnell
003 - 4 HaftaPending refreshStokta Yok
Digi-Key
0020 HaftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Özellikler

  • Grade: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: SOT-563, SOT-666
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1): 4.7kOhms
  • Frequency - Transition: 250MHz
  • Supplier Device Package: EMT6
  • Resistor - Emitter Base (R2): 47kOhms
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
  • Current - Collector (Ic) (Max): 100mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50V