EMB10T2R

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Özellikler

• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Resistor - Base (R1): 2.2kOhms
• Frequency - Transition: 250MHz
• Supplier Device Package: EMT6
• Resistor - Emitter Base (R2): 47kOhms
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector (Ic) (Max): 100mA
• Current - Collector Cutoff (Max): 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Voltage - Collector Emitter Breakdown (Max): 50V