ULN2801A

TRANS 8NPN DARL 50V 500MA 18DIP | STMicroelectronics

TRANS 8NPN DARL 50V 500MA 18DIP

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Genel Bakış

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Ürün Açıklaması

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Özellikler

Grade: -
Power - Max: 2.25W
Mounting Type: Through Hole
Qualification: -
Package / Case: 18-DIP (0.300", 7.62mm)
Transistor Type: 8 NPN Darlington
Operating Temperature: -20°C ~ 85°C (TA)
Frequency - Transition: -
Supplier Device Package: 18-DIP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector (Ic) (Max): 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Voltage - Collector Emitter Breakdown (Max): 50V

https://www.st.com/content/ccc/resource/technical/document/datasheet/e4/fa/1c/16/4e/39/49/04/CD00000179.pdf/files/CD00000179.pdf/jcr:content/translations/en.CD00000179.pdf