2N2907A

Ürün Açıklaması

Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18

Özellikler

• Power - Max: 500 mW
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Transistor Type: PNP
• Operating Temperature: -65°C ~ 200°C (TJ)
• Frequency - Transition: -
• Supplier Device Package: TO-18
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector (Ic) (Max): 600 mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
• Voltage - Collector Emitter Breakdown (Max): 60 V