MJE350G

Ürün Açıklaması

Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126

Özellikler

• Power - Max: 20 W
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Transistor Type: PNP
• Operating Temperature: -65°C ~ 150°C (TJ)
• Frequency - Transition: -
• Supplier Device Package: TO-126
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector (Ic) (Max): 500 mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Voltage - Collector Emitter Breakdown (Max): 300 V