0
Giriş Yap
Kayıt Ol
Ana Sayfa
Tüm Kategoriler
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
MOSFET N-CH 500V 1.7A TO252-3

IPD50R3K0CEAUMA1

MOSFET N-CH 500V 1.7A TO252-3 | Infineon Technologies
MOSFET N-CH 500V 1.7A TO252-3
Fiyat Aralığı
Fiyatlar 0 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

Collecting offers...

TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4 HaftaPending refreshStokta Yok
Arrow
003 - 4 HaftaPending refreshStokta Yok
Mouser
003 - 4 HaftaPending refreshStokta Yok
TME
003 - 4 HaftaPending refreshStokta Yok
Farnell
003 - 4 HaftaPending refreshStokta Yok
Digi-Key
0020 HaftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

N-Channel 500 V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Vgs(th) (Max) @ Id: 3.5V @ 30µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
  • Power Dissipation (Max): 26W (Tc)
  • Supplier Device Package: PG-TO252-3
  • Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
  • Drain to Source Voltage (Vdss): 500 V
  • Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
https://www.infineon.com/dgdl/IPx50R3K0CE_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339dcf4b10139e7e9ff592ce4