SI3443DDV-T1-GE3

Ürün Açıklaması

P-Channel 20 V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Özellikler

• Grade: -
• FET Type: P-Channel
• Vgs (Max): ±12V
• Technology: MOSFET (Metal Oxide)
• FET Feature: -
• Mounting Type: Surface Mount
• Qualification: -
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V
• Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
• Supplier Device Package: 6-TSOP
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
• Drain to Source Voltage (Vdss): 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)