MPSA06

Ürün Açıklaması

Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 625 mW Through Hole TO-92-3

Özellikler

• Power - Max: 625 mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Transistor Type: NPN
• Operating Temperature: -55°C ~ 150°C (TJ)
• Frequency - Transition: 100MHz
• Supplier Device Package: TO-92-3
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector (Ic) (Max): 500 mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Voltage - Collector Emitter Breakdown (Max): 80 V