MMBT5551LT1G

Ürün Açıklaması

Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)

Özellikler

• Power - Max: 225 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Operating Temperature: -55°C ~ 150°C (TJ)
• Frequency - Transition: -
• Supplier Device Package: SOT-23-3 (TO-236)
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Current - Collector (Ic) (Max): 600 mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Voltage - Collector Emitter Breakdown (Max): 160 V