TK39N60W5,S1VF

MOSFET N-CH 600V 38.8A TO247 | Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A TO247

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Ürün Açıklaması

N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247

Özellikler

Grade: -
FET Type: N-Channel
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Through Hole
Qualification: -
Package / Case: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Operating Temperature: 150°C (TJ)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Supplier Device Package: TO-247
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)

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