TPW1R306PL,L1Q

MOSFET N-CH 60V 260A 8DSOP | Toshiba Semiconductor and Storage

MOSFET N-CH 60V 260A 8DSOP

Fiyat Aralığı

Fiyatlar 0 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

Collecting offers...

Tedarikçi	Stok	Min	Fiyat	Teslimat	Güncellendi	Adet	İşlem
Future Electronics	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Arrow	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Mouser	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
TME	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Farnell	0	0		3 - 4 Hafta	Pending refresh		Stokta Yok
Digi-Key	0	0		20 Hafta	Pending refresh		Stokta Yok

Genel Bakış

Dokümanlar

Ürün Açıklaması

N-Channel 60 V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

Özellikler

Grade: -
FET Type: N-Channel
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Surface Mount
Qualification: -
Package / Case: 8-PowerVDFN
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Operating Temperature: 175°C
Rds On (Max) @ Id, Vgs: 1.29mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Supplier Device Package: 8-DSOP Advance
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)

https://toshiba.semicon-storage.com/info/docget.jsp?did=55843&prodName=TPW1R306PL