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MOSFET P-CH 40V 90A DPAK | Toshiba Semiconductor and Storage

MOSFET P-CH 40V 90A DPAK

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Ürün Açıklaması

P-Channel 40 V 90A (Ta) 180W (Tc) Surface Mount DPAK+

Özellikler

Grade: Automotive
FET Type: P-Channel
Vgs (Max): +10V, -20V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Surface Mount
Qualification: AEC-Q101
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: 2V @ 1mA
Operating Temperature: 175°C
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Supplier Device Package: DPAK+
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)

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