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Discrete Semiconductor Products
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UMOS9 SOP-ADV(N) PD=170W F=1MHZ

TPH2R306NH1,LQ

UMOS9 SOP-ADV(N) PD=170W F=1MHZ | Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
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Ürün Açıklaması

N-Channel 60 V 136A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: 8-PowerTDFN
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Operating Temperature: 150°C
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
  • Power Dissipation (Max): 800mW (Ta), 170W (Tc)
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Drain to Source Voltage (Vdss): 60 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
https://toshiba.semicon-storage.com/info/TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1