TK3R1P04PL,RQ

MOSFET N-CHANNEL 40V 58A DPAK | Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 40V 58A DPAK

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Ürün Açıklaması

N-Channel 40 V 58A (Tc) 87W (Tc) Surface Mount DPAK

Özellikler

Grade: -
FET Type: N-Channel
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Surface Mount
Qualification: -
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Operating Temperature: 175°C
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 29A, 10V
Power Dissipation (Max): 87W (Tc)
Supplier Device Package: DPAK
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)

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