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TPN11006NL,LQ

MOSFET N-CH 60V 17A 8TSON | Toshiba Semiconductor and Storage
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Ürün Açıklaması

N-Channel 60 V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: 8-PowerVDFN
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Operating Temperature: 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
  • Power Dissipation (Max): 700mW (Ta), 30W (Tc)
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Drain to Source Voltage (Vdss): 60 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)