TPN2R304PL,L1Q

MOSFET N-CH 40V 80A 8TSON | Toshiba Semiconductor and Storage

MOSFET N-CH 40V 80A 8TSON

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Genel Bakış

Dokümanlar

Ürün Açıklaması

N-Channel 40 V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Özellikler

Grade: -
FET Type: N-Channel
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Surface Mount
Qualification: -
Package / Case: 8-PowerVDFN
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Operating Temperature: 175°C
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)

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