TPN4R712MD,L1Q

MOSFET P-CH 20V 36A 8TSON | Toshiba Semiconductor and Storage

MOSFET P-CH 20V 36A 8TSON

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Genel Bakış

Dokümanlar

Ürün Açıklaması

P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Özellikler

Grade: -
FET Type: P-Channel
Vgs (Max): ±12V
Technology: MOSFET (Metal Oxide)
FET Feature: -
Mounting Type: Surface Mount
Qualification: -
Package / Case: 8-PowerVDFN
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Operating Temperature: 150°C (TJ)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)

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